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23 January 2006 Resonant Raman technique: a powerful tool for exploring electron-phonon coupling in Se nanoclusters
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Proceedings Volume 6029, ICO20: Materials and Nanostructures; 60290N (2006)
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Raman scattering is an inelastic process, in which we can obtain information about material lattice vibration frequencies. If the wavelength of the excitation laser is within the electronic spectrum of the material, the intensity of some Raman-active vibrations will increase enormously. This resonant Raman effect can be quite useful to explore the electron-phonon coupling in the substance. In this article, we report the investigations on the electron-phonon coupling effect in Se nanoclusters using resonant Raman technique. Up to 10 different laser lines are used in the experiment. The Raman intensity strongly depends on the energy of the laser lines used for excitation. The one-phonon symmetric A1 modes for Se single helix and Se8 rings are enhanced in the vicinity of their absorption bands. Detailed analysis shows that the Raman intensity in the high frequency range 450 - 550 cm-1 is a sum of individual second-order Raman scattering intensities for the confined Se species. These two-phonon Raman shifts occur at twice the frequency shift of the first-order Raman lines, and their intensities are also enhanced when the excitation laser energy matches an electronic transition in Se nanoclusters.
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Irene Ling Li, Jian Pang Zhai, Zi Kang Tang, Shuang Chen Ruan, and Min Zhang "Resonant Raman technique: a powerful tool for exploring electron-phonon coupling in Se nanoclusters", Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60290N (23 January 2006);


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