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23 January 2006 Double frequency absorption induced by Al-Si Schottky barrier potential and mechanism of two-photon response
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Proceedings Volume 6029, ICO20: Materials and Nanostructures; 602917 (2006) https://doi.org/10.1117/12.667740
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Abstract
By observing two-photon response and anisotropy of the light-induced voltage in Si-Al Schottky barrier potential of the Si MSM (Metal-Semiconductor-Metal) planar structure two-photon response optical detector. It is certified from the experimental and theoretical analysis that the built-in electric field generated by the Schottky barrier potential will induce the phenomena of optical rectification in Si photodiode. Thus, it is deduced that there must be double-frequency absorption (DFA) caused by phase-mismatch in the mechanism of two-photon response of Si photodiode. If the intensity of the built-in electric field is strong enough, the DFA will be the main feature of the two-photon response.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaoting Zhang, Yanjun Gao, Zhanguo Chen, Gang Jia, Yunlong Liu, Xiuhuan Liu, and Yuhong Zh "Double frequency absorption induced by Al-Si Schottky barrier potential and mechanism of two-photon response", Proc. SPIE 6029, ICO20: Materials and Nanostructures, 602917 (23 January 2006); https://doi.org/10.1117/12.667740
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