Paper
7 February 2006 Tunable guided mode resonant gratings for passive and active devices: Si subwavelength MEMS structures and the combination with GaN film
F. R. Hu, T. Kobayashi, K. Ochi, B. S. Choi, Y. Zhao, Y. Kanamori, K. Hane
Author Affiliations +
Proceedings Volume 6032, ICO20: MEMS, MOEMS, and NEMS; 603204 (2006) https://doi.org/10.1117/12.667847
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Abstract
We propose a tunable micro-laser using a guided mode resonant grating (GMRG). The GMRG is used for both cavity and periodic gain medium. In order to realize the proposed device, first, the passive GMRG suitable for the wavelength filtering was investigated. Rigorous coupled wave analysis (RCWA) was used to design the grating. We found that the resonant reflection was obtained even in such structure that a single grating layer was suspended in the air. For tuning the wavelength of the GMRG, we propose the grating combined with a MEMS actuator. The GMRG combined with an electrostatic comb actuator was fabricated from SOI (silicon on insulator) wafer by Si micromachining. The period of the Si grating was varied form 600nm to 700nm. The peak of the reflectance shifted with the increase of the period in the visible and infrared region. In order to install the periodic gain structure in the Si MEMS, a monolithic fabrication of GaN device on Si substrate is studied. The GaN is a powerful material for the active optical devices in visible (especially blue) region. We studied the growth of GaN film on Si substrate using molecular beam epitaxy (MBE). Some basic characteristics of the GaN film grown on Si substrate were measured and analyzed. Furthermore, the self-suspended gratings with the periods around 500nm were fabricated form the GaN film grown on Si substrate.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. R. Hu, T. Kobayashi, K. Ochi, B. S. Choi, Y. Zhao, Y. Kanamori, and K. Hane "Tunable guided mode resonant gratings for passive and active devices: Si subwavelength MEMS structures and the combination with GaN film", Proc. SPIE 6032, ICO20: MEMS, MOEMS, and NEMS, 603204 (7 February 2006); https://doi.org/10.1117/12.667847
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KEYWORDS
Silicon

Gallium nitride

Thin films

Etching

Microelectromechanical systems

Semiconducting wafers

Reflectivity

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