Study of lag effect in LPHD plasma etching of Si for MEMS applications by variable time steps in numerical methods

Jian Zhang; Qing-An Huang; Wei-Hua Li

doi:10.1117/12.667866

7 February 2006 Study of lag effect in LPHD plasma etching of Si for MEMS applications by variable time steps in numerical methods

Jian Zhang, Qing-An Huang, Wei-Hua Li

Author Affiliations +

Proceedings Volume 6032, ICO20: MEMS, MOEMS, and NEMS; 60320H (2006) https://doi.org/10.1117/12.667866
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

A simplified numerical model for two-dimensional etched profile evolution is developed based on dynamics of plasma~surface interactions. The Lag effect, which is an important phenomenon in plasma etching, is detected in fixed-aspect-ratio structures by this model. So it may provide aid to theory and experiment research of plasma etching. The setting of time steps in numerical simulations is also discussed in this paper and the optimal time steps are proposed and verified.

Citation Download Citation

Jian Zhang, Qing-An Huang, and Wei-Hua Li "Study of lag effect in LPHD plasma etching of Si for MEMS applications by variable time steps in numerical methods", Proc. SPIE 6032, ICO20: MEMS, MOEMS, and NEMS, 60320H (7 February 2006); https://doi.org/10.1117/12.667866

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