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7 February 2006 Measurement of residual stress in multilayered thin films by a full-field optical method
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Proceedings Volume 6032, ICO20: MEMS, MOEMS, and NEMS; 60320L (2006) https://doi.org/10.1117/12.667870
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Abstract
Wafer level thin film residual stress measurement is crucial for the structural reliability of many semiconductor and MEMS devices. The curvature measurement scheme is usually the most widely used method. Film stress is determined by converting the measured curvatures using Stoney formula. During the fabrication of the IC and MEMS devices, however, multilayered thin films are often generated on both sides of the wafer simultaneously. By extending the Stoney formula, this paper presents a method for measuring residual stress in the multilayered films on the wafer. In the method, only the back film layers of the wafer need to be etched in turn and corresponding curvature radii need to be measured by a full-field optical method. The residual stress of each film layer may then be obtained by the radii using the extended Stoney formula. The extended Stoney formula was verified by Coventorware. Experiments show that the proposed method is simple and accurate for process monitoring.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Meng Nie, Qing-An Huang, and Weihua Li "Measurement of residual stress in multilayered thin films by a full-field optical method", Proc. SPIE 6032, ICO20: MEMS, MOEMS, and NEMS, 60320L (7 February 2006); https://doi.org/10.1117/12.667870
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