Conductivity of self-organized silicon quantum dots embedded in silicon dioxide

Thipwan Fangsuwannarak; Edwin Pink; Yidan Huang; Young Hyun Cho; Gavin Conibeer; Tom Puzzer; Martin A. Green

doi:10.1117/12.638399

28 December 2005 Conductivity of self-organized silicon quantum dots embedded in silicon dioxide

Thipwan Fangsuwannarak, Edwin Pink, Yidan Huang, Young Hyun Cho, Gavin Conibeer, Tom Puzzer, Martin A. Green

Proceedings Volume 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV; 60370T (2005) https://doi.org/10.1117/12.638399
Event: Microelectronics, MEMS, and Nanotechnology, 2005, Brisbane, Australia

Abstract

Silicon quantum dots (SiQDs) embedded in silicon dioxide are being investigated as a means of engineering a wide band gap semiconductor for potential application in silicon based tandem solar cells. The conductivity of the self-organized silicon dots embedded in the oxide is an important parameter in characterizing the electronic transport mechanisms. We present in this paper our initial results on measurement of the resistivity as a function of temperature. In order to reduce contact resistance aluminium contacts are annealed to induce spiking through upper layers of oxide and thus producing a large contact surface area. Samples with various initial silicon rich concentrations are compared. Activation energies for various tentative conduction mechanisms are calculated from this data and possible conduction models presented.

Citation Download Citation

Thipwan Fangsuwannarak, Edwin Pink, Yidan Huang, Young Hyun Cho, Gavin Conibeer, Tom Puzzer, and Martin A. Green "Conductivity of self-organized silicon quantum dots embedded in silicon dioxide", Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 60370T (28 December 2005); https://doi.org/10.1117/12.638399

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