Electrical and optical properties of VO<sub>2</sub> thin films affected by preparation process

Jie He; Li-bin Lin; Yong Lu; Tie-cheng Lu; Zhong-hua Liu; Jing Wang

doi:10.1117/12.638378

3 January 2006 Electrical and optical properties of VO₂ thin films affected by preparation process

Jie He, Li-bin Lin, Yong Lu, Tie-cheng Lu, Zhong-hua Liu, Jing Wang

Proceedings Volume 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV; 60371K (2006) https://doi.org/10.1117/12.638378
Event: Microelectronics, MEMS, and Nanotechnology, 2005, Brisbane, Australia

Abstract

VO₂ thin films were prepared from V₂O₅ films using post-deposition annealing in vacuum. The films obtained have been studied by using XRD, XPS, SEM, UV-VIS and electrical measurements. The results show that the samples prepared at the optimal conditions before and after phase transition the resistance of VO₂ thin film changes about 10³ orders and the transmittance of 900nm light change 40%. Different preparation conditions can change the phase transition properties in VO₂ thin films. The structural properties of samples are improved but the phase transition properties are declined by the increase of annealing time and annealing temperature. The best reasonable annealing time and annealing temperature has been got by discussing the effects of annealing time and annealing temperature on the phase transition point and hysteresis width. Other factors that affect the optical and electrical properties in VO₂ thin films have also been discussed.

Citation Download Citation

Jie He, Li-bin Lin, Yong Lu, Tie-cheng Lu, Zhong-hua Liu, and Jing Wang "Electrical and optical properties of VO₂ thin films affected by preparation process", Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 60371K (3 January 2006); https://doi.org/10.1117/12.638378

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