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28 February 2006 Middle-infrared electroluminescence of n-type Cr-doped ZnSe crystals
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Abstract
We report the study of middle-infrared electroluminescence of n-type, Cr doped bulk ZnSe crystals. n-type, Cr-doped ZnSe samples were prepared in three stages. At the first stage, the undoped polycrystalline ZnSe samples were grown by chemical vapor deposition. During the second stage, the doping of 1 mm thick ZnSe polycrystalline wafers was performed by post-growth thermal diffusion of Cr. Finally, Cr:ZnSe wafers were annealed with Al2Se3 and ZnSe powders in sealed vacuumed ampoules at 950°C for 96 hours. Comparison of the absorption spectra of the crystals before and after thermal diffusion with Aluminum indicates the preservation of the desired Cr2+ ions. Ohmic contacts for electrical measurements were formed by polishing the facets and wetting the surface of the crystals with In. The best crystals demonstrated conductivity of up to 10-100 ohm*cm. The electroluminescence measurements were taken using synchronous detection methods with an InSb detector. A pulse generator output (100V) at 5 kHz and a lock-in amplifier were used to distinguish luminescence signals from other possible noise sources. We report the observation of middleinfrared (2-3μm and 8μm) and visible (~600 nm) electroluminescence of n-type Cr doped bulk ZnSe crystals.
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Lawrence Luke, Vladimir V. Fedorov, Igor Moskalev, Andrew Gallian, and Sergey B. Mirov "Middle-infrared electroluminescence of n-type Cr-doped ZnSe crystals", Proc. SPIE 6100, Solid State Lasers XV: Technology and Devices, 61000Y (28 February 2006); https://doi.org/10.1117/12.646935
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