Paper
15 February 2006 Advances in high brightness semiconductor lasers
R. M. Lammert, S. W. Oh, M. L. Osowski, C. Panja, P. T. Rudy, T. S. Stakelon, J. E. Ungar
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Abstract
We review recent advances in high power semiconductor lasers including increased spectral brightness, increased spatial brightness, and reduced cost architectures at wavelengths from the near infrared to the eye-safe regime. Data are presented which demonstrate both edge emitter devices and high power surface emitting 2-dimensional arrays with internal gratings to narrow and stabilize the spectrum. Diodes with multimode high spatial brightness and high power single mode performance in the 808 and 976nm regime are described, and advances in high power bars at eye-safe wavelengths are presented. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. M. Lammert, S. W. Oh, M. L. Osowski, C. Panja, P. T. Rudy, T. S. Stakelon, and J. E. Ungar "Advances in high brightness semiconductor lasers", Proc. SPIE 6104, High-Power Diode Laser Technology and Applications IV, 61040I (15 February 2006); https://doi.org/10.1117/12.651148
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Cited by 2 scholarly publications.
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KEYWORDS
Semiconductor lasers

High power lasers

Diodes

Fiber Bragg gratings

Fabry–Perot interferometers

Mirrors

Reliability

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