Inspection of defects and metallic contamination in SiGe:B CMOS using an in-line photoluminescence monitor

Chin I Liao; Andrzej Buczkowski; C. C. Chien; K. T. Huang; Zhiqiang Li; Tom Walker; Steve G. Hummel; S. F. Tzou

doi:10.1117/12.645605

1 March 2006 Inspection of defects and metallic contamination in SiGe:B CMOS using an in-line photoluminescence monitor

Chin I Liao, Andrzej Buczkowski, C. C. Chien, K. T. Huang, Zhiqiang Li, Tom Walker, Steve G. Hummel, S. F. Tzou

Proceedings Volume 6106, Photon Processing in Microelectronics and Photonics V; 61061H (2006) https://doi.org/10.1117/12.645605
Event: Lasers and Applications in Science and Engineering, 2006, San Jose, California, United States

Abstract

Selective area epitaxial (SAE) growth of strained SiGe:B (Boron) in the recessed source/drain (S/D) region of an MOS device is known to improve Si-PMOS performance due to enhancement of hole mobility and reduction of S/D resistance. However, the process may be adversely affected by pattern loading effects, SiGe relaxation, dislocation formation, dopant precipitation and contamination. These effects, if not controlled, will deteriorate device performance and yield. A nondestructive, in-line SAE process monitoring approach on patterned wafers is especially desired. A specialized, contact-less, carrier lifetime-based Room Temperature - Photoluminescence (RT-PL) method meets this demand. The RT-PL tool, which uses a novel excitation path design to achieve carrier confinement, device-suitable probing depth, submicron scanning resolution and a micron probe size, offers a quick, non-destructive assessment of strain, defects and contamination for SAE. In this paper, a systematic evaluation of blanket and selective growth layers is illustrated using layers with a Ge content of 15-25%, undoped and B-doped at ~10²⁰ cm^-3 concentration. For the as-grown conditions, we observed that SiGe remains in an unrelaxed state without extended dislocations being formed. These results suggest that SiGe composition could be further modified to optimize the associated mobility enhancement. Uniformity variations associated with SiGe composition and B-doping were identified. Excessive boron precipitation, metallic particle-originated defects and large contamination regions induced by processing tools were also exposed. The multiple and unique insights enabled through the RT-PL technique provide significant benefits towards decreasing process development and integration time, maintaining SiGe process in control and reducing device fabrication costs.

Citation Download Citation

Chin I Liao, Andrzej Buczkowski, C. C. Chien, K. T. Huang, Zhiqiang Li, Tom Walker, Steve G. Hummel, and S. F. Tzou "Inspection of defects and metallic contamination in SiGe:B CMOS using an in-line photoluminescence monitor", Proc. SPIE 6106, Photon Processing in Microelectronics and Photonics V, 61061H (1 March 2006); https://doi.org/10.1117/12.645605

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available