High g testing of MEMS devices

Robert P. O'Reilly

doi:10.1117/12.650722

5 January 2006 High g testing of MEMS devices

Robert P. O'Reilly

Proceedings Volume 6111, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS V; 61110I (2006) https://doi.org/10.1117/12.650722
Event: MOEMS-MEMS 2006 Micro and Nanofabrication, 2006, San Jose, California, United States

Abstract

Replicating the mechanical environments to which MEMS devices (Micro- Electro-Mechanical Systems) are exposed requires extreme test strategies. Acceleration levels in the 10's of thousands of g's is a normal occurrence in today's MEMS applications. Traditional test methods in use for over a half century are no longer adequate. New test methods are constantly required to meet the demanding quality and reliability levels of everything from emerging consumer applications to safety critical military and automotive systems.

Citation Download Citation

Robert P. O'Reilly "High g testing of MEMS devices", Proc. SPIE 6111, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS V, 61110I (5 January 2006); https://doi.org/10.1117/12.650722

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