Paper
28 February 2006 Analysis of the static and dynamic characteristics of 1310 nm vertical-cavity surface-emitting lasers
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Abstract
We present the static and dynamic simulation of a long-wavelength vertical-cavity surface-emitting laser (VCSEL) operating at around 1310 nm. The device consists of AlGaAs/GaAs distributed Bragg reflectors (DBRs) which are wafer-fused to both sides of the InP-based cavity with InAlGaAs quantum wells. A tunnel junction is used for current injection into the active region. The structure is simulated with a modified version of the commercial device simulator Synopsys Sentaurus Device. The fully-coupled two-dimensional electro-opto-thermal simulations use a microscopic physics-based model. Carrier transport is described by the continuity and Poisson equations and self-heating effects are accounted for by a thermodynamic equation. To obtain the opticalmodes, the wave equation is solved using a finite element approach. The optical gain model includes many-body effects. The equations are solved self-consistently. Calibrations of static (L-I, V-I curves) and dynamic characteristics (RIN) show good agreement with measurements at different temperatures. On this basis, the simulations reveal the critical factors that determine the modulation-current efficiency factor (MCEF) of the device.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandra Bäcker, Stefan Odermatt, Friedhard Römer, Matthias Streiff, and Bernd Witzigmann "Analysis of the static and dynamic characteristics of 1310 nm vertical-cavity surface-emitting lasers", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 611512 (28 February 2006); https://doi.org/10.1117/12.644712
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Cited by 2 scholarly publications.
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KEYWORDS
Vertical cavity surface emitting lasers

Electrons

Quantum wells

Temperature metrology

Calibration

Optical simulations

Modulation

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