Advances in laser cooling of semiconductors

M. Sheik-Bahae; B. Imangholi; M. P. Hasselbeck; R. I. Epstein; S. Kurtz

doi:10.1117/12.644915

28 February 2006 Advances in laser cooling of semiconductors

M. Sheik-Bahae, B. Imangholi, M. P. Hasselbeck, R. I. Epstein, S. Kurtz

Proceedings Volume 6115, Physics and Simulation of Optoelectronic Devices XIV; 611518 (2006) https://doi.org/10.1117/12.644915
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Laser cooling in semiconductor structures due to anti-Stokes luminescence is reviewed. Theoretical background considering luminescence trapping and red-shifting, the effect of free carrier and back-ground absorption, Pauli band-blocking, and the temperature-dependence of various recombination mechanisms are discussed. Recent experimental results demonstrating record external quantum efficiencies (EQE) in GaAs/GaInP heterostructures are described, and conditions favorable for the first observation of laser cooling in semiconductors are discussed.

Citation Download Citation

M. Sheik-Bahae, B. Imangholi, M. P. Hasselbeck, R. I. Epstein, and S. Kurtz "Advances in laser cooling of semiconductors", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 611518 (28 February 2006); https://doi.org/10.1117/12.644915

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available