Paper
28 February 2006 Band gap engineering for laser cooling of semiconductors
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Abstract
Various methods leading to potential improvement of laser cooling in semiconductors are considered. It is shown that using combination of bandgap engineering in electronic domain and photonic bandgap engineering one can attain a factor of few improvement in efficiency provided the nonradiative efficiency does not get affected.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jacob B. Khurgin "Band gap engineering for laser cooling of semiconductors", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 611519 (28 February 2006); https://doi.org/10.1117/12.644138
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Cited by 5 scholarly publications.
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KEYWORDS
Semiconductor lasers

Semiconductors

Gallium arsenide

Quantum efficiency

Absorption

Gallium nitride

Ionization

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