Strong coupling in a single quantum dot semiconductor microcavity system

S. Reitzenstein; G. Sęk; A. Löffler; C. Hofmann; S. Kuhn; J. P. Reithmaier; L. V. Keldysh; V. D. Kulakovskii; T. L. Reinecke; A. Forchel

doi:10.1117/12.661393

28 February 2006 Strong coupling in a single quantum dot semiconductor microcavity system

S. Reitzenstein, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, J. P. Reithmaier, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, A. Forchel

Author Affiliations +

Proceedings Volume 6115, Physics and Simulation of Optoelectronic Devices XIV; 61151M (2006) https://doi.org/10.1117/12.661393
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Properties of atom-like emitters in cavities are successfully described by cavity quantum electrodynamics (cQED). We report on cavity quantum electrodynamics (cQED) experiments in a single quantum dot semiconductor system. CQED, which is a very active research field in optics and solid state physics, can be divided into a weak and a strong coupling regime. In case of weak coupling, the spontaneous emission rate of an atom-like emitter, e.g. a single quantum dot exciton, can be enhanced or reduced compared to the value in vacuum in an irreversible emission process. In contrast, a reversible energy exchange between the emitter and the cavity mode takes place when the conditions for strong coupling are fulfilled. We investigate weak as well as strong coupling in a system based on a low density In_0.3Ga _0.7As quantum dot layer placed as the active layer in a high quality planar AlAs/GaAs distributed Bragg reflector cavity grown by molecular beam epitaxy. Using electron beam lithography and deep plasma etching, micropillars with high Q-factors (up to 43.000 for 4 μm diameter) were realized from the planar cavity structure. Due to the high oscillator strength of the In_0.3Ga _0.7As quantum dots together with a small mode volume in high finesse micropillar cavities it is possible to observe strong coupling characterized by a vacuum Rabi splitting of 140 μeV. The fabrication of high-Q micropillar cavities as well as conditions necessary to realize strong coupling in the present system are discussed in detail.

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S. Reitzenstein, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, J. P. Reithmaier, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, and A. Forchel "Strong coupling in a single quantum dot semiconductor microcavity system", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151M (28 February 2006); https://doi.org/10.1117/12.661393

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