Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate

Yu-Sheng Liao; Gong-Ru Lin; Hao-Chung Kuo; Milton Feng

doi:10.1117/12.645859

23 February 2006 Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic In_xGa_1-xP buffered GaAs substrate

Yu-Sheng Liao, Gong-Ru Lin, Hao-Chung Kuo, Milton Feng

Author Affiliations +

Proceedings Volume 6119, Semiconductor Photodetectors III; 61190L (2006) https://doi.org/10.1117/12.645859
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes, with the partially p-doped photoabsorption layer, grown on GaAs substrate by using a linearly graded metamorphic In_xGa_1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4 times 10^-15 W/Hz^1/2, and 8 GHz, respectively, at 1550 nm. Under the illumination of 1.2-ps pulse-train, the measured impulse response is 41 ps and the frequency bandwidth is up to 8 GHz with heterodyne beating measurement. The low cost InGaAs photodiode with high current bandwidth product (350 mA times GHz, at 10 GHz) and bandwidth-efficient product (4.8 GHz times A/W) have been achieved.

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Yu-Sheng Liao, Gong-Ru Lin, Hao-Chung Kuo, and Milton Feng "Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic In_xGa_1-xP buffered GaAs substrate", Proc. SPIE 6119, Semiconductor Photodetectors III, 61190L (23 February 2006); https://doi.org/10.1117/12.645859

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