Gd-implanted GaN as a candidate for spin injector

V. Avrutin; Ü. Özgür; J. Xie; Y. Fu; F. Yun; H. Morko; V. I. Litvinov

doi:10.1117/12.646951

3 March 2006 Gd-implanted GaN as a candidate for spin injector

V. Avrutin, Ü. Özgür, J. Xie, Y. Fu, F. Yun, H. Morko, V. I. Litvinov

Proceedings Volume 6121, Gallium Nitride Materials and Devices; 61210U (2006) https://doi.org/10.1117/12.646951
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Due to their unique physical properties GaN-based heterostructures show a great promise for spintronics applications. This stimulates the search for GaN-based ferromagnetic semiconductors which can be used for injection of spin polarized carriers in device structures. In this study, magnetic properties of GaN layers implanted with Gd⁺ ions to various doses were investigated. Magnetization curves of samples with Gd content n_Gd = 2x10¹⁷ and 2x10¹⁸ cm^-3 show clear hysteresis, while the samples with n_Gd = 2x10¹⁶ and 2x10¹⁹ cm^-3 exhibit no ferromagnetism. Most likely, the lowest Gd concentration produced magnetization below the detection limit, whereas the absence of ferromagnetism in the sample with the highest Gd content may be resulted from heavy implantation-induced damage. Curie temperatures for samples with Gd contents of 2x10¹⁷ and 2x10¹⁸ cm^-3 were estimated to be larger than 300 K. Saturation magnetizations of 1550 μ_B and 1350 μ_B per Gd-atom were found at 5 K and 300 K, respectively, for the sample with n_Gd=2x10¹⁸ cm^-3.

Citation Download Citation

V. Avrutin, Ü. Özgür, J. Xie, Y. Fu, F. Yun, H. Morko, and V. I. Litvinov "Gd-implanted GaN as a candidate for spin injector", Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210U (3 March 2006); https://doi.org/10.1117/12.646951

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