Translator Disclaimer
Paper
1 March 2006 Design of a 10 GHz silicon modulator based on a 0.25 μm CMOS process: a silicon photonic approach
Author Affiliations +
Abstract
We report the design of a 10 GHz non-return-to-zero (NRZ) silicon modulator based upon 0.25-μm CMOS/BiCMOS processes. The basic optical component is a ridge waveguide slightly-doped with P and N impurities, which forms a reverse-biased P/N junction. The diode typically operates between reverse and zero biases, so as to change the number of free carriers overlapping with the optical mode and consequently modulate the phase of the light. This type of phase shifters form the arms of a push-pull Mach-Zehnder interferometer to realize amplitude modulation.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. W. Zheng, D. Z. Feng, G. Gutierrez, and T. Smith "Design of a 10 GHz silicon modulator based on a 0.25 μm CMOS process: a silicon photonic approach", Proc. SPIE 6125, Silicon Photonics, 61250E (1 March 2006); https://doi.org/10.1117/12.644942
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
Back to Top