Design of a 10 GHz silicon modulator based on a 0.25 &#956;m CMOS process: a silicon photonic approach

D. W. Zheng; D. Z. Feng; G. Gutierrez; T. Smith

doi:10.1117/12.644942

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1 March 2006 Design of a 10 GHz silicon modulator based on a 0.25 μm CMOS process: a silicon photonic approach

D. W. Zheng, D. Z. Feng, G. Gutierrez, T. Smith

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Proceedings Volume 6125, Silicon Photonics; 61250E (2006) https://doi.org/10.1117/12.644942
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We report the design of a 10 GHz non-return-to-zero (NRZ) silicon modulator based upon 0.25-μm CMOS/BiCMOS processes. The basic optical component is a ridge waveguide slightly-doped with P and N impurities, which forms a reverse-biased P/N junction. The diode typically operates between reverse and zero biases, so as to change the number of free carriers overlapping with the optical mode and consequently modulate the phase of the light. This type of phase shifters form the arms of a push-pull Mach-Zehnder interferometer to realize amplitude modulation.

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D. W. Zheng, D. Z. Feng, G. Gutierrez, and T. Smith "Design of a 10 GHz silicon modulator based on a 0.25 μm CMOS process: a silicon photonic approach", Proc. SPIE 6125, Silicon Photonics, 61250E (1 March 2006); https://doi.org/10.1117/12.644942

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