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1 March 2006 Heterogenous integration of InP/InGaAsP photodetectors onto ultracompact silicon-on-insulator waveguide circuits
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Abstract
We present the heterogeneous integration of InP/InGaAsP photodetectors onto ultracompact Silicon-on-Insulator (SOI) waveguide circuits using benzocyclobutene (BCB) die to wafer bonding. This technology development enables the integration of a photonic interconnection layer on top of CMOS. Fabrication processes were optimized and the transfer of a passive Silicon-on-Insulator waveguide layer using BCB was assessed.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Günther Roelkens, Joost Brouckaert, Dirk Taillaert, Pieter Dumon, Wim Bogaerts, Richard Nötzel, Dries Van Thourhout, and Roel Baets "Heterogenous integration of InP/InGaAsP photodetectors onto ultracompact silicon-on-insulator waveguide circuits", Proc. SPIE 6125, Silicon Photonics, 61250K (1 March 2006); https://doi.org/10.1117/12.645587
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