Heterogenous integration of InP/InGaAsP photodetectors onto ultracompact silicon-on-insulator waveguide circuits

Günther Roelkens; Joost Brouckaert; Dirk Taillaert; Pieter Dumon; Wim Bogaerts; Richard Nötzel; Dries Van Thourhout; Roel Baets

doi:10.1117/12.645587

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1 March 2006 Heterogenous integration of InP/InGaAsP photodetectors onto ultracompact silicon-on-insulator waveguide circuits

Günther Roelkens, Joost Brouckaert, Dirk Taillaert, Pieter Dumon, Wim Bogaerts, Richard Nötzel, Dries Van Thourhout, Roel Baets

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Proceedings Volume 6125, Silicon Photonics; 61250K (2006) https://doi.org/10.1117/12.645587
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We present the heterogeneous integration of InP/InGaAsP photodetectors onto ultracompact Silicon-on-Insulator (SOI) waveguide circuits using benzocyclobutene (BCB) die to wafer bonding. This technology development enables the integration of a photonic interconnection layer on top of CMOS. Fabrication processes were optimized and the transfer of a passive Silicon-on-Insulator waveguide layer using BCB was assessed.

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Günther Roelkens, Joost Brouckaert, Dirk Taillaert, Pieter Dumon, Wim Bogaerts, Richard Nötzel, Dries Van Thourhout, and Roel Baets "Heterogenous integration of InP/InGaAsP photodetectors onto ultracompact silicon-on-insulator waveguide circuits", Proc. SPIE 6125, Silicon Photonics, 61250K (1 March 2006); https://doi.org/10.1117/12.645587

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