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28 February 2006 Electrical and optical performance of InAs/GaSb superlattice LWIR detectors
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InAs/GaSb superlattices are a promising technology for long-wave and very-long-wave infrared photodetectors. Present detectors at these wavelengths are mostly built using bulk HgCdTe (MCT) alloys, where the bandgap is controlled by the mercury-cadmium ratio. In contrast, InAs/GaSb heterostructures control the bandgap by engineering the widths of the layers making up the superlattice. This approach is expected to have important advantages over MCT, notably the tighter control of bandgap uniformity across a sample and the suppression of Auger recombination. InAs/GaSb superlattices have a potential advantage in temperature of operation, uniformity and yield. To realize their inherent potential, however, superlattice materials with low defect density and improved device characteristics must be demonstrated. Here, we report on the growth and characterization of a 9.7 μm cutoff wavelength InAs/GaSb superlattice detector, with a resistance-area product of R0A = 11 Ωcm2 at 78 K, and an 8.5 μm cutoff diode with a resistance-area product of R0A = 160 Ωcm2 at 78 K. The devices are p-i-n diodes with a relatively thin intrinsic region of depth 0.5 μm as the active absorbing region. The measured external quantum efficiencies of 7.1% and 5.4 % at 7.9 μm are not yet large enough to challenge the incumbent MCT technology, but suggest scaling the intrinsic region could be a way forward to potentially useful detectors.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Field, G. J. Sullivan, A. Ikhlassi, C. Grein, M. E. Flatté, H. Yang, M. Zhong, and M. Weimer "Electrical and optical performance of InAs/GaSb superlattice LWIR detectors", Proc. SPIE 6127, Quantum Sensing and Nanophotonic Devices III, 61270V (28 February 2006);


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