Paper
7 February 2006 Quantum dot photonic crystal detectors
Kalyan Teja Posani, Vaibhav Tripathi, Senthil Annamalai, Sanjay Krishna, Raviv Perahia, Orion Crisafulli, Oskar Painter
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Abstract
In this paper we report the use of a photonic crystal resonant cavity to increase the quantum efficiency, detectivity (D*) and the background limited infrared photodetector (BLIP) temperature of a quantum dot detector. The photonic crystal is incorporated in InAs/InGaAs/GaAs dots-in-well (DWELL) detector using Electron beam lithography. From calibrated blackbody measurements, the conversion efficiency of the detector with the photonic crystal (DWELL-PC) is found to be 58.5% at -2.5 V while the control DWELL detectors have quantum efficiency of 7.6% at the same bias. We observed no significant reduction in the dark current of the photonic crystal devices compared to the normal structure. The generation-recombination limited D* at 77K with a 300K F1.7 background, is estimated to be 6 x 1010 cmHz1/2/W at -3V bias for the DWELL-PC which is a factor of 20 higher than that of the control sample. We also observed a 20% increase in the BLIP temperature for the DWELL-PCs.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kalyan Teja Posani, Vaibhav Tripathi, Senthil Annamalai, Sanjay Krishna, Raviv Perahia, Orion Crisafulli, and Oskar Painter "Quantum dot photonic crystal detectors", Proc. SPIE 6129, Quantum Dots, Particles, and Nanoclusters III, 612906 (7 February 2006); https://doi.org/10.1117/12.641750
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Cited by 3 scholarly publications.
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KEYWORDS
Sensors

Photonic crystals

Quantum efficiency

Quantum dots

Infrared sensors

Gallium arsenide

Infrared detectors

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