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10 February 2006 1.3 μm strained InGaAs quantum well VCSELs: operation characteristics and transverse modes analysis
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Abstract
We report results on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs) for optical interconnection applications. The structure was grown by metalorganic vapour-phase epitaxy (MOVPE) and processed as top p-type DBR oxide-confined device. Our VCSELs exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The thermal behaviour of our devices is explained through the threshold current-temperature characteristics. Furthermore, the effective index model is used to understand the modal behaviour.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Pougeoise, Ph. Gilet, Ph. Grosse, S. Poncet, A. Chelnokov, J.-M. Gérard, G. Bourgeois, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, and P. Sundgren "1.3 μm strained InGaAs quantum well VCSELs: operation characteristics and transverse modes analysis", Proc. SPIE 6132, Vertical-Cavity Surface-Emitting Lasers X, 613207 (10 February 2006); https://doi.org/10.1117/12.646140
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