1.3 &#956;m strained InGaAs quantum well VCSELs: operation characteristics and transverse modes analysis

E. Pougeoise; Ph. Gilet; Ph. Grosse; S. Poncet; A. Chelnokov; J.-M. Gérard; G. Bourgeois; R. Stevens; R. Hamelin; M. Hammar; J. Berggren; P. Sundgren

doi:10.1117/12.646140

Translator Disclaimer

10 February 2006 1.3 μm strained InGaAs quantum well VCSELs: operation characteristics and transverse modes analysis

E. Pougeoise, Ph. Gilet, Ph. Grosse, S. Poncet, A. Chelnokov, J.-M. Gérard, G. Bourgeois, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, P. Sundgren

Author Affiliations +

Proceedings Volume 6132, Vertical-Cavity Surface-Emitting Lasers X; 613207 (2006) https://doi.org/10.1117/12.646140
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We report results on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs) for optical interconnection applications. The structure was grown by metalorganic vapour-phase epitaxy (MOVPE) and processed as top p-type DBR oxide-confined device. Our VCSELs exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The thermal behaviour of our devices is explained through the threshold current-temperature characteristics. Furthermore, the effective index model is used to understand the modal behaviour.

Citation Download Citation

E. Pougeoise, Ph. Gilet, Ph. Grosse, S. Poncet, A. Chelnokov, J.-M. Gérard, G. Bourgeois, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, and P. Sundgren "1.3 μm strained InGaAs quantum well VCSELs: operation characteristics and transverse modes analysis", Proc. SPIE 6132, Vertical-Cavity Surface-Emitting Lasers X, 613207 (10 February 2006); https://doi.org/10.1117/12.646140

ACCESS THE FULL ARTICLE