Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs

Yen-Kuang K. Kuo; Jun-Rong Chen; Ming-Yung Jow; Cheng-Zu Wu; Bao-Jen Pong; Chii-Chang Chen

doi:10.1117/12.645405

10 February 2006 Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs

Yen-Kuang K. Kuo, Jun-Rong Chen, Ming-Yung Jow, Cheng-Zu Wu, Bao-Jen Pong, Chii-Chang Chen

Proceedings Volume 6132, Vertical-Cavity Surface-Emitting Lasers X; 61320M (2006) https://doi.org/10.1117/12.645405
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Vertical-cavity surface-emitting lasers with variant compressively strained InGaAlAs quantum wells have been investigated. The valence band structures, optical gain spectra, and threshold properties of InGaAlAs/AlGaAs quantum wells are compared and analyzed. The simulation results indicate that the characteristics of InGaAlAs quantum wells can be improved by increasing the amount of compressive strain in quantum well. Furthermore, the properties of VCSELs with these compressively strained InGaAlAs quantum wells are studied numerically. The results of numerical calculations show that the threshold current and maximum output power can be enhanced by using higher compressively strained InGaAlAs quantum well. However, when the compressive strain is larger than about 1.5%, further improvement of the laser performance becomes minimal. The effects of the position and aperture size of the oxide-confinement layers on the laser performance are also investigated. Variation of the oxide layer design is shown to affect the current distribution which makes the temperature in the active region different. It is the main reason for the power roll-off in the VCSEL devices.

Citation Download Citation

Yen-Kuang K. Kuo, Jun-Rong Chen, Ming-Yung Jow, Cheng-Zu Wu, Bao-Jen Pong, and Chii-Chang Chen "Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs", Proc. SPIE 6132, Vertical-Cavity Surface-Emitting Lasers X, 61320M (10 February 2006); https://doi.org/10.1117/12.645405

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available