InP based QCL in MBE production machine

Michel Garcia; Francois Julien Vermersch; Xavier Marcadet; Shailendra Bansropun; Mathieu Carras; Arnaud Wilk; Christine Chaix; Carlo Sirtori

doi:10.1117/12.645943

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22 February 2006 InP based QCL in MBE production machine

Michel Garcia, Francois Julien Vermersch, Xavier Marcadet, Shailendra Bansropun, Mathieu Carras, Arnaud Wilk, Christine Chaix, Carlo Sirtori

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Proceedings Volume 6133, Novel In-Plane Semiconductor Lasers V; 613304 (2006) https://doi.org/10.1117/12.645943
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Quantum Cascade Lasers (QCL), emitting between 5 and 9 μm, have been realised with a view to achieving QCLs fabrication on a production scale. The growth of the structures was carried out in a multi-wafer RIBER 49 system (13 x 2" platen), and the processing sequence involved an Inductively Coupled Plasma (ICP) step for homogeneity and reproducibility purposes. To validate the approach used, a first batch of lasers, emitting around 9μm, based on a design already published [1], has been realised. State of the art performance on these devices (J_th = 4.2 kA cm^-2, η = 304 mW A^-1, P_max = 690 mW) has been achieved. A second set of strained balanced structures, emitting around 5.4μm, has been demonstrated, working in pulsed operation at room temperature(J_th = 3.9 kA cm^-2, η = 362 mW A^-1, P_max = 420 mW).

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Michel Garcia, Francois Julien Vermersch, Xavier Marcadet, Shailendra Bansropun, Mathieu Carras, Arnaud Wilk, Christine Chaix, and Carlo Sirtori "InP based QCL in MBE production machine", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 613304 (22 February 2006); https://doi.org/10.1117/12.645943

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