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22 February 2006 Mid-IR type-II W and interband cascade lasers emitting high CW powers
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The I-V characteristics, lasing thresholds, and wallplug efficiencies of type-II "W" mid-IR diode lasers from 16 different wafers were studied in order to determine the influence of various device parameters. At T = 90 K, the wallplug efficiency for a 1-mm-long gain-guided device was > 10% and the slope efficiency was 142 mW/A (38% external quantum efficiency). When a 22-μm-wide ridge was lithographically defined on a 5-period "W" laser with a p-GaSb etch stop layer, the maximum cw operating temperature increased to 230 K. We also investigated 5-stage and 10-stage interband cascade lasers containing "W" active quantum wells. For 10-stage devices, the low-temperature threshold current densities were somewhat higher than in the "W" diodes while at higher temperatures they were slightly lower. The threshold voltage was only ≈ 0.1 V larger than the photon energy multiplied by the number of stages, corresponding to a voltage efficiency of > 96%, while the differential series resistance-area product above threshold was as low as 0.21 mΩ.cm2 at 100 K. At T = 78 K, the cw slope efficiency was 0.48 mW/A (126% external quantum efficiency), and a maximum cw power of 514 mW was produced by an epi-side-up-mounted 2-mm-long 10-stage laser cavity with uncoated facets. A 5-stage 2-mm-long interband cascade laser produced ≈ 700 mW of output power at 80 K, with a maximum wallplug efficiency of 20% per facet.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. S. Kim, C. L. Canedy, W. W. Bewley, M. Kim, J. R. Lindle, I. Vurgaftman, and J. R. Meyer "Mid-IR type-II W and interband cascade lasers emitting high CW powers", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 613309 (22 February 2006);


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