High-efficient 650 nm laser bars with an output power of about 10 W and a wall-plug efficiency of 30%

Bernd Sumpf; Martin Zorn; Ralf Staske; Jörg Fricke; Peter Ressel; Götz Erbert; Markus Weyers; Günther Tränkle

doi:10.1117/12.644555

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22 February 2006 High-efficient 650 nm laser bars with an output power of about 10 W and a wall-plug efficiency of 30%

Bernd Sumpf, Martin Zorn, Ralf Staske, Jörg Fricke, Peter Ressel, Götz Erbert, Markus Weyers, Günther Tränkle

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Proceedings Volume 6133, Novel In-Plane Semiconductor Lasers V; 61330D (2006) https://doi.org/10.1117/12.644555
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

In this paper, results for 650 nm high-power broad area lasers and bars will be presented. The optimized layer structure consists of GaInP quantum wells embedded in AlGaInP waveguide layers. The n-cladding layer consists of AlInP, the p-cladding layer of AlGaAs. The vertical far field of this structure has a width below 32° (FWHM). Devices were fabricated and mounted p-side down on CuW heat spreader using AuSn solder. Broad area lasers reach a maximum output power of 0.94 W at 15°C limited only by thermal rollover. Up to now reliable operation at 500 mW over 6300 h was achieved. The spectral width of the emission is below 1 nm (FWHM). Bars consisting of 19 emitters with 30 μm x 750 μm reached a maximum output power of 9.6 W and a wall-plug efficiency of 30%. Reliable operation from a 5 mm bar at 5 W and 15°C over 1500 h was shown.

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Bernd Sumpf, Martin Zorn, Ralf Staske, Jörg Fricke, Peter Ressel, Götz Erbert, Markus Weyers, and Günther Tränkle "High-efficient 650 nm laser bars with an output power of about 10 W and a wall-plug efficiency of 30%", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 61330D (22 February 2006); https://doi.org/10.1117/12.644555

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