Heterogeneous integration of silicon and AlGaInAs for a silicon evanescent laser

Alexander W. Fang; Hyundai Park; Richard Jones; Oded Cohen; Mario J. Paniccia; John E. Bowers

doi:10.1117/12.660735

7 February 2006 Heterogeneous integration of silicon and AlGaInAs for a silicon evanescent laser

Alexander W. Fang, Hyundai Park, Richard Jones, Oded Cohen, Mario J. Paniccia, John E. Bowers

Proceedings Volume 6133, Novel In-Plane Semiconductor Lasers V; 61330W (2006) https://doi.org/10.1117/12.660735
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We report a novel laser architecture, the silicon evanescent laser (SEL), that utilizes a silicon waveguide and offset AlGaInAs quantum wells. The silicon waveguide is fabricated on a Silicon-On-Insulator (SOI) wafer using a CMOS-compatible process, and is bonded with the AlGaInAs quantum well structure using low temperature O2 plasma-assisted wafer bonding. The optical mode in the SEL is predominantly confined in the passive silicon waveguide and evanescently couples into the III-V active region providing optical gain. This approach combines the advantages of high gain III-V materials and the integration capability of silicon technology. Moreover, the difficulty of coupling an external laser source is overcome as the hybrid waveguide can be self-aligned to silicon-based passive optical devices. The SEL lases continuous wave (CW) at 1568 nm with a threshold of 23 mW. The maximum single-sided fiber-coupled CW output power is 4.5 mW. The SEL characteristics are dependent on the silicon waveguide dimensions resulting in different confinement factors in the III-V gain region.

Citation Download Citation

Alexander W. Fang, Hyundai Park, Richard Jones, Oded Cohen, Mario J. Paniccia, and John E. Bowers "Heterogeneous integration of silicon and AlGaInAs for a silicon evanescent laser", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 61330W (7 February 2006); https://doi.org/10.1117/12.660735

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