Optimization method for transparent conducting oxide films prepared by DC magnetron sputtering

Jun Wang; Jianbo Cheng; Hui Lin; Quan Jiang; Gang Yang; Yadong Jiang

doi:10.1117/12.674272

9 June 2006 Optimization method for transparent conducting oxide films prepared by DC magnetron sputtering

Jun Wang, Jianbo Cheng, Hui Lin, Quan Jiang, Gang Yang, Yadong Jiang

Proceedings Volume 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 614928 (2006) https://doi.org/10.1117/12.674272
Event: 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2005, Xian, China

Abstract

We deposited indium tin oxide (ITO) films on glass substrates with DC magnetron sputtering system and the experiments were scheduled by orthogonal test table L₃₂(4⁸). Sheet resistance, surface morphology and transmittance of films were tested. Effects of eight parameters on electrical and optical properties of ITO films, were discussed in detail. Deposition pressure, flow ratio of argon to oxygen and annealing temperature will greatly affect conductance of ITO films. The best parameters for sputtering ITO are: deposition pressure 2mTorr, flow ratio of argon to oxygen 16:0.5, annealing temperature 700K, distance between target and substrate 15, annealing time 1h, sputtering power 300W, annealing atmosphere pure nitrogen and deposition temperature 500K. Sheet resistance, transmittance in visible region and resistivity of the film prepared with above parameters are 17Ω/, 85.13%, 1.87×10^-4Ω•cm, respectively.

Citation Download Citation

Jun Wang, Jianbo Cheng, Hui Lin, Quan Jiang, Gang Yang, and Yadong Jiang "Optimization method for transparent conducting oxide films prepared by DC magnetron sputtering", Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 614928 (9 June 2006); https://doi.org/10.1117/12.674272

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