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9 June 2006 Study on grating coupling very long wavelength GaAs/AlGaAs QWIP
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Proceedings Volume 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 61493O (2006) https://doi.org/10.1117/12.674360
Event: 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2005, Xian, China
Abstract
Because of the isotropic energy band structure of the Γ electrons in N type GaAs/AlGaAs quantum well infrared photodetector (QWIP), normal incident radiation absorption is impossible so that the optical grating becomes key requirements for such QWIPs. The development of very long wavelength infrared GaAs/AlxGa1-xAs quantum well Infrared photodetectors (QWIPs) is proposed in the paper based on optimization of 2-d period grating design, processing of detector, and a 16μm cutoff wavelength QWIP has been demonstrated at 40K. The blackbody responsibility Rv=3.4847×106V/W is obtained. The peak detectivity reaches D* λ=2.962×1010cm•Hz1/2/W.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Guo, N. Li, S. Yu, J. Lin, Y. Hou, D. Xiong, Y. He, H. Zeng, X. Xu, Z. Zhu, W. Lu, Q. Huang, and J. Zhou "Study on grating coupling very long wavelength GaAs/AlGaAs QWIP", Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 61493O (9 June 2006); https://doi.org/10.1117/12.674360
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