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22 March 2006 Evaluation of resolution and LER in the resist patterns replicated by EUV microexposure tools
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Abstract
To find resists having high resolution accompanied with good sensitivity and small LER is a big issue in EUV lithography to make path for volume manufacturing. We have started screening of resists by using high numerical aperture (NA) micro-exposure tool HiNA. Some of the results within 29 evaluated resists, including commercial and non-commercial, are presented with the consideration of relationship between optical conditions. The results obtained by another high NA micro-exposure tool MET located Berkeley National Laboratory are also shown and compared with the results by HiNA. In both exposure tools, down to 28 nm dense patterns were replicated but the LER was about 4 nm at best showing the requirement for further works
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yukiko Kikuchi, Yuusuke Tanaka, Hiroaki Oizumi, Fumiaki Kumasaka, DooHoon Goo, and Iwao Nishiyama "Evaluation of resolution and LER in the resist patterns replicated by EUV microexposure tools", Proc. SPIE 6151, Emerging Lithographic Technologies X, 615107 (22 March 2006); https://doi.org/10.1117/12.655106
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