Defect printability study using EUV lithography

Christian Holfeld; Karsten Bubke; Falk Lehmann; Bruno La Fontaine; Adam R. Pawloski; Siegfried Schwarzl; Frank-Michael Kamm; Thomas Graf; Andreas Erdmann

doi:10.1117/12.656386

23 March 2006 Defect printability study using EUV lithography

Christian Holfeld, Karsten Bubke, Falk Lehmann, Bruno La Fontaine, Adam R. Pawloski, Siegfried Schwarzl, Frank-Michael Kamm, Thomas Graf, Andreas Erdmann

Author Affiliations +

Proceedings Volume 6151, Emerging Lithographic Technologies X; 61510U (2006) https://doi.org/10.1117/12.656386
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Defect-free masks are one of the top issues for enabling EUV lithography at the 32-nm node. Since a defect-free process cannot be expected, an understanding of the defect printability is required in order to derive critical defect sizes for the mask inspection and repair. Simulations of the aerial image are compared to the experimental printing in resist on the wafer. Strong differences between the simulations and the actual printing are observed. In particular the minimum printable defect size is much larger than expected which is explained in terms of resist resolution. The defect printability in the current configuration is limited by the resist process rather than the projection optics.

Citation Download Citation

Christian Holfeld, Karsten Bubke, Falk Lehmann, Bruno La Fontaine, Adam R. Pawloski, Siegfried Schwarzl, Frank-Michael Kamm, Thomas Graf, and Andreas Erdmann "Defect printability study using EUV lithography", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61510U (23 March 2006); https://doi.org/10.1117/12.656386

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