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23 March 2006 Evaluation of FIB and e-beam repairs for implementation on step and flash imprint lithography templates
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Abstract
In order for Step and Flash Imprint Lithography S-FIL or any other imprint lithography to become truly viable for manufacturing, certain elements of the infrastructure must be present. In particular, these elements include; fast and precise Electron Beam (E-beam) pattern writing, ability to inspect, and a methodology to repair. The focus of this paper will be to investigate repair of clear and opaque defects on S-FIL templates using Focused Ion Beam (FIB) and Electron beam technologies. During this study, FEI's Accura XT FIB mask repair system was used to selectively mill opaque line edge defects as small as 45 nm in the Cr-based and 30 nm in the quartz-based patterns. Repairs to the Cr pattern achieved a placement offset of 8.8 nm with a one sigma value of 11.4 nm. Additionally, a series of trench cuts were made perpendicular through line segments to determine the minimum cut resolution. In an effort to repair clear defects within chrome patterns, studies were performed to deposit carbon or a proprietary metallization using either FEI's FIB platform or E-beam mask repair research tool. This paper will discuss the repair strategy used and include characterization of repairs through Scanning Electronic Microscopy (SEM) and Atomic Force Microscopy (AFM) imaging. Furthermore, repair efficiency was determined by assessing the ability of the repair to hold up through the remainder of the template fabrication process and ultimately pattern transfer of imprinted features.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. R. Young, W. J. Dauksher, K. J. Nordquist, E. S. Ainley, K. A. Gehoski, A. A. Graupera, and M. H. Moriarty "Evaluation of FIB and e-beam repairs for implementation on step and flash imprint lithography templates", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61511D (23 March 2006); https://doi.org/10.1117/12.659529
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