Inline CD metrology with combined use of scatterometry and CD-SEM

Masafumi Asano; Takahiro Ikeda; Toru Koike; Hideaki Abe

doi:10.1117/12.656326

24 March 2006 In-line CD metrology with combined use of scatterometry and CD-SEM

Masafumi Asano, Takahiro Ikeda, Toru Koike, Hideaki Abe

Proceedings Volume 6152, Metrology, Inspection, and Process Control for Microlithography XX; 61521V (2006) https://doi.org/10.1117/12.656326
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Measurement characteristics in scatterometry and CD-SEM for lot acceptance sampling of inline critical dimension (CD) metrology were investigated by using a statistical approach with Monte Carlo simulation. By operation characteristics curve analysis, producer's risk and consumer's risk arising from sampling were clarified. Single use of scatterometry involves a higher risk, such risk being particularly acute in the case of large intra-chip CD variation because it is unable to sufficiently monitor intra-chip CD variation including local CD error. Substituting scatterometry for conventional SEM metrology is accompanied with risks, resulting in the increase of unnecessary cost. The combined use of scatterometry and SEM metrology in which the sampling plan for SEM is controlled by scatterometry is a promising metrology from the viewpoint of the suppression of risks and cost. This is due to the effect that CD errors existing in the distribution tails are efficiently caught.

Citation Download Citation

Masafumi Asano, Takahiro Ikeda, Toru Koike, and Hideaki Abe "In-line CD metrology with combined use of scatterometry and CD-SEM", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61521V (24 March 2006); https://doi.org/10.1117/12.656326

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