Study of critical dimension and overlay measurement methodology using SEM image analysis for process control

Tae Yong Lee; Byoung Ho Lee; Soo Bok Chin; Young Sun Cho; Jun Sik Hong; Jong Seo Hong; Chang Lyong Song

doi:10.1117/12.656736

24 March 2006 Study of critical dimension and overlay measurement methodology using SEM image analysis for process control

Tae Yong Lee, Byoung Ho Lee, Soo Bok Chin, Young Sun Cho, Jun Sik Hong, Jong Seo Hong, Chang Lyong Song

Author Affiliations +

Proceedings Volume 6152, Metrology, Inspection, and Process Control for Microlithography XX; 61522E (2006) https://doi.org/10.1117/12.656736
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

As the design rule of semiconductor devices shrinks to below 100nm dimensions, the degree of pattern alignment from different process levels has become a crucial factor affecting both process control and induced defect on unit process. Isolated and dense patterns were formed at process layers from front-end through to back-end on wafers using sub 100nm device process utilizing ArF lithography under various lithography conditions. As pattern size is reduced, overlay discrepancies become larger. The OL (overlay) error is very important because the pattern misalignment induces critical defects for the device. For many years, overlay metrology for process control has been measured by 4-corner box-in-box methods in chip. OL errors and CD (Critical Dimension) values have been measured on different tool. CD values have been measured on SEMs (Scanning Electron Microscope) and OL errors have been measured on optical tools. The accuracy of OL error metrology is limited by the resolution of tool, which is on the order of 1μm. In this paper we calculated the degree of overlay errors (current level to prior level errors) through a process patterns images obtained from a CD-SEM.

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Tae Yong Lee, Byoung Ho Lee, Soo Bok Chin, Young Sun Cho, Jun Sik Hong, Jong Seo Hong, and Chang Lyong Song "Study of critical dimension and overlay measurement methodology using SEM image analysis for process control", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61522E (24 March 2006); https://doi.org/10.1117/12.656736

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