Contact-area metrology of magnetic tunneling junction structures

Tom Zhong; Daniel Liu; Amit Moran; Michael Levkovitch; Michael Har-Zvi; Bob Burkhardt

doi:10.1117/12.659739

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24 March 2006 Contact-area metrology of magnetic tunneling junction structures

Tom Zhong, Daniel Liu, Amit Moran, Michael Levkovitch, Michael Har-Zvi, Bob Burkhardt

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Proceedings Volume 6152, Metrology, Inspection, and Process Control for Microlithography XX; 61522L (2006) https://doi.org/10.1117/12.659739
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Magneto-resistive Random Access Memory (MRAM), considered the leading candidate for the next generation of universal memory, has moved from research to pilot production. Commercialization of the MRAM devices in mobile computing, cell phones, portable recording and other playback devices, home computing, consumer electronics, enterprise computing and telecommunications, promise to bring in annual revenues exceeding $50 billion during the coming years. CD-SEM correlation of contact physical Critical Dimension to Magnetic Tunneling Junction (MTJ) resistance is critical for MRAM device performance. This paper focuses on a new two-dimensional metric that more accurately characterizes MTJ resistance by calculating total contact area of unique and complex structures. We consider the advantages of the Contact Area metric for measurement of complicated shapes. We illustrate that introduction of the new metric allows for improvement in process control for critical contacts.

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Tom Zhong, Daniel Liu, Amit Moran, Michael Levkovitch, Michael Har-Zvi, and Bob Burkhardt "Contact-area metrology of magnetic tunneling junction structures", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61522L (24 March 2006); https://doi.org/10.1117/12.659739

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