Self assembly in semiconductor microelectronics: self-aligned sub-lithographic patterning using diblock copolymer thin films

C. T. Black; R. Ruiz

doi:10.1117/12.659252

13 March 2006 Self assembly in semiconductor microelectronics: self-aligned sub-lithographic patterning using diblock copolymer thin films

C. T. Black, R. Ruiz

Author Affiliations +

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 615302 (2006) https://doi.org/10.1117/12.659252
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Self-assembling diblock copolymer thin films are an intriguing possible photolithography alternative for high-resolution patterning of advanced integrated circuit device elements. Cylindrical- and lamellar-phase materials spontaneously form patterns suggestive of contact-hole arrays and transistor gates at critical dimensions below 20nm. Besides high resolution, any serious lithographic process requires a means of pattern registration, and we discuss our efforts to develop self-aligned self assembly techniques using diblock copolymer materials. We describe the critical role of polymer surface interactions in affecting self-assembled pattern orientations. Control and design of surface properties allow precise registration of sub-20nm polymer domains to larger-scale lithographic layers.

Citation Download Citation

C. T. Black and R. Ruiz "Self assembly in semiconductor microelectronics: self-aligned sub-lithographic patterning using diblock copolymer thin films", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615302 (13 March 2006); https://doi.org/10.1117/12.659252

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