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11 April 2006 Progress of topcoat and resist development for 193nm immersion lithography
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Abstract
193nm immersion lithography is the most promising lithography candidate for 45nm node technology and beyond. However, immersion specific issue, such as the immersion specific defect and the leaching of resists compound into immersion fluid, still exists without any effective countermeasure. To realize a productive 193nm immersion lithography process, we have to develop a cost effective material that might be immersion dedicated resist. In this paper, we investigated the leaching with different polymer protective agents and hydrophobicity. It was found that the leaching amount was strongly related to the activation energy of the protective agent and hydrophobicity of the polymer. Higher activation energy of protective agents and higher hydrophobicity of polymer showed less amount of leaching. In this paper, newly developed developable type topcoat TILCTM-031 demonstrated the excellent ability of immersion defect prevention.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katsumi Ohmori, Tomoyuki Ando, Toshikazu Takayama, Keita Ishizuka, Masaki Yoshida, Yoshiyuki Utsumi, Kotaro Endo, and Takeshi Iwai "Progress of topcoat and resist development for 193nm immersion lithography", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61531X (11 April 2006); https://doi.org/10.1117/12.656360
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