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29 March 2006 Versatility in lithographic performance of advanced 193 nm contact hole resist
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This paper introduces high performing contact hole resist targeting 65 nm node and below IC applications. Both 80 nm and 100 nm contact hole performance are evaluated under optimized condition by ProlithTM simulations and the advantage of the shrinking technique (RELACSTM) is discussed for 65 nm node. The functionality of 193 nm polymers and the influence of resist components on lithographic performance are described with experimental design. The optimized resist, AZ® AX2050P is versatile in lithographic performance with large process window, excellent resist profile, good contact circularity and sidewall roughness. Its unusual PEB sensitivity property, resist pattern thermal flow behavior and performance with RELACSTM material are also reported. AZ® AXTM2050P has a high resolution combined with a large depth of focus and an iso-dense overlap window with RELACSTM R602 [85 nm CD (NA 0.85) DOF 0.30 μm @ Exposure latitude 8%].
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takanori Kudo, Guanyang Lin, Dongkwan Lee, Dalil Rahman, Allen Timko, Douglas Mckenzie, Clement Anyadiegwu, Simon Chiu, Frank Houlihan, David Rentkiewicz, Ralph R. Dammel, Munirathna Padmanaban, and John Biafore "Versatility in lithographic performance of advanced 193 nm contact hole resist", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532C (29 March 2006);

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