Post-etch LER performance of novel surface conditioner solutions

P. Zhang; M. Jaramillo; S. Cassel; T. Wallow; A. Acheta; A. R. Pawloski; S. Bell; R. H. Kim

doi:10.1117/12.656648

29 March 2006 Post-etch LER performance of novel surface conditioner solutions

P. Zhang, M. Jaramillo, S. Cassel, T. Wallow, A. Acheta, A. R. Pawloski, S. Bell, R. H. Kim

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61533Y (2006) https://doi.org/10.1117/12.656648
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

As line edge roughness (LER) becomes one of the critical lithography challenges, there is a growing interest in applying surface conditioner solutions during post-develop process to reduce LER. In this paper, we evaluated the combined effect of surface conditioners and hard bake on the post-develop LER. There is about 1nm LER reduction, as well as a significant improvement on the common process window for LER. No negative impact on CD process window was observed with the new process. In addition, preliminary etch data showed that surface conditioners have no negative impact on pattern transfer through etch.

Citation Download Citation

P. Zhang, M. Jaramillo, S. Cassel, T. Wallow, A. Acheta, A. R. Pawloski, S. Bell, and R. H. Kim "Post-etch LER performance of novel surface conditioner solutions", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61533Y (29 March 2006); https://doi.org/10.1117/12.656648

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