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29 March 2006 Chemically amplified thick film i-line positive resist for electroplating and redistribution applications
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Abstract
Adapting chemically amplified (CA) resist technology to thick film applications is demonstrated in this paper over a wide range of thicknesses and types of substrates. Substantial performance differences were observed over copper (Cu) substrates compared to silicon (Si). These differences are attributed to different photo acid generator (PAG) distribution in the resist depth influenced by its structure and the nature of the substrate. Optimized resist formulations were developed to provide acceptable performance on Cu wafers. A family of new chemically amplified thick film resist products is being introduced to the market. This technology offers significant advantages in throughput and performance over conventional novolak / diazonaphthoquinone (DNQ) products at a competitive cost.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Medhat Toukhy, Salem Mullen, Margareta Paunescu, Chunwei Chen, Stephen Meyer, Georg Pawlowski, Yoshio Murakami, and Clifford Hamel "Chemically amplified thick film i-line positive resist for electroplating and redistribution applications", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61534H (29 March 2006); https://doi.org/10.1117/12.656595
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