Predictive focus exposure modeling (FEM) for full-chip lithography

Luoqi Chen; Yu Cao; Hua-yu Liu; Wenjin Shao; Mu Feng; Jun Ye

doi:10.1117/12.656891

15 March 2006 Predictive focus exposure modeling (FEM) for full-chip lithography

Luoqi Chen, Yu Cao, Hua-yu Liu, Wenjin Shao, Mu Feng, Jun Ye

Proceedings Volume 6154, Optical Microlithography XIX; 61541T (2006) https://doi.org/10.1117/12.656891
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

To minimize or eliminate lithography errors associated with optical proximity correction, integrated circuit manufacturers need an accurate, predictive, full-chip lithography model which can account for the entire process window (PW). We have validated the predictive power of a novel focus-exposure modeling methodology with wafer data collected across the process window at multiple customer sites. Tachyon Focus-Exposure Modeling (FEM) first-principle, physics-driven simulations deliver accurate and predictive full-chip lithography modeling for producing state-of-the-art circuits.

Citation Download Citation

Luoqi Chen, Yu Cao, Hua-yu Liu, Wenjin Shao, Mu Feng, and Jun Ye "Predictive focus exposure modeling (FEM) for full-chip lithography", Proc. SPIE 6154, Optical Microlithography XIX, 61541T (15 March 2006); https://doi.org/10.1117/12.656891

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