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15 March 2006 Predictive focus exposure modeling (FEM) for full-chip lithography
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Abstract
To minimize or eliminate lithography errors associated with optical proximity correction, integrated circuit manufacturers need an accurate, predictive, full-chip lithography model which can account for the entire process window (PW). We have validated the predictive power of a novel focus-exposure modeling methodology with wafer data collected across the process window at multiple customer sites. Tachyon Focus-Exposure Modeling (FEM) first-principle, physics-driven simulations deliver accurate and predictive full-chip lithography modeling for producing state-of-the-art circuits.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luoqi Chen, Yu Cao, Hua-yu Liu, Wenjin Shao, Mu Feng, and Jun Ye "Predictive focus exposure modeling (FEM) for full-chip lithography", Proc. SPIE 6154, Optical Microlithography XIX, 61541T (15 March 2006); https://doi.org/10.1117/12.656891
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