Paper
15 March 2006 Optical anisotropy approach in spectroscopic ellipsometry to determine the CD of contact hole patterns
Jaisun Kyoung, Hyuknyeong Cheon, Sangbin Noh, Jongkyu Cho, Ilsin An, Sukjoo Lee, Hangu Cho
Author Affiliations +
Abstract
We applied spectroscopic ellipsometry for possible determination of the size of contact holes. We fabricated contact hole patterns in two dimensional array to increase sensitivity and the size of contact hole varied from 80 to 150 nm. Variation of hole-diameter in few nm was distinguishable by comparing the features in ellipsometry parameter Δ, Ψ or the degree of polarization spectra. These features could be used to estimate the size of contact holes once they were calibrated by other techniques. When the photoresist film with dense contact hole pattern was regarded as a uniaxial material, the ellipsometry spectra could be analyzed with anisotropic optical model. In the process, the average size of contact hole could be estimated from the anisotropy of the film.
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Jaisun Kyoung, Hyuknyeong Cheon, Sangbin Noh, Jongkyu Cho, Ilsin An, Sukjoo Lee, and Hangu Cho "Optical anisotropy approach in spectroscopic ellipsometry to determine the CD of contact hole patterns", Proc. SPIE 6155, Data Analysis and Modeling for Process Control III, 61550L (15 March 2006); https://doi.org/10.1117/12.656875
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KEYWORDS
Anisotropy

Ellipsometry

Photoresist materials

Spectroscopic ellipsometry

Optical lithography

Scanning electron microscopy

Calibration

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