Hot spot management in ultra-low k<sub>1</sub> lithography

Kohji Hashimoto; Satoshi Usui; Shigeki Nojima; Satoshi Tanaka; Eiji Yamanaka; Soichi Inoue

doi:10.1117/12.656418

13 March 2006 Hot spot management in ultra-low k₁ lithography

Kohji Hashimoto, Satoshi Usui, Shigeki Nojima, Satoshi Tanaka, Eiji Yamanaka, Soichi Inoue

Proceedings Volume 6156, Design and Process Integration for Microelectronic Manufacturing IV; 61560N (2006) https://doi.org/10.1117/12.656418
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

We have constructed a hot spot management flow for LSI manufacturing in the ultra-low k₁ lithography era. This flow involves three main management steps: hot spot reduction, hot spot extraction and hot spot monitoring. Hot spot reduction works for lithography friendly restriction (RDR) and manufacturability check (MC). Hot spot extraction is carried out with consideration of short turn-around-time (TAT), accurate extraction and convenient functions such as hot spot for interlayers. Hot spot monitoring is achieved with tolerance-based verification in mask fabrication process and wafer process (lithography and etching). These technology elements were integrated into the actual LSI fabrication flow. The application of this concept to LSI manufacturing could contribute to reduction of total cost, quick TAT and ramp up to volume production.

Citation Download Citation

Kohji Hashimoto, Satoshi Usui, Shigeki Nojima, Satoshi Tanaka, Eiji Yamanaka, and Soichi Inoue "Hot spot management in ultra-low k₁ lithography", Proc. SPIE 6156, Design and Process Integration for Microelectronic Manufacturing IV, 61560N (13 March 2006); https://doi.org/10.1117/12.656418

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