Sequential PPC and process-window-aware mask layout synthesis

Apo Sezginer; Franz X. Zach; Bayram Yenikaya; Jesus Carrero; Hsu-Ting Huang

doi:10.1117/12.656667

13 March 2006 Sequential PPC and process-window-aware mask layout synthesis

Apo Sezginer, Franz X. Zach, Bayram Yenikaya, Jesus Carrero, Hsu-Ting Huang

Proceedings Volume 6156, Design and Process Integration for Microelectronic Manufacturing IV; 615613 (2006) https://doi.org/10.1117/12.656667
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

We present a full-chip implementation of model-based process and proximity compensation. Etch corrections are applied according to a two-dimensional model. Lithography is compensated by optimizing a cost function that expresses the design intent. The cost function penalizes edge placement errors at best dose and defocus as well as displacement of the edges in response to a specified change in a process parameter. This increases immunity to bridging in low contrast areas.

Citation Download Citation

Apo Sezginer, Franz X. Zach, Bayram Yenikaya, Jesus Carrero, and Hsu-Ting Huang "Sequential PPC and process-window-aware mask layout synthesis", Proc. SPIE 6156, Design and Process Integration for Microelectronic Manufacturing IV, 615613 (13 March 2006); https://doi.org/10.1117/12.656667

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