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14 March 2006 Simple method to verify OPC data based on exposure condition
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In a world where Sub100nm lithography tool is an everyday household item for device makers, shrinkage of the device is at a rate that no one ever have imagined. With the shrinkage of device at such a high rate, demand placed on Optical Proximity Correction (OPC) is like never before. To meet this demand with respect to shrinkage rate of the device, more aggressive OPC tactic is involved. Aggressive OPC tactics is a must for sub 100nm lithography tech but this tactic eventually results in greater room for OPC error and complexity of the OPC data. Until now, Optical Rule Check (ORC) or Design Rule Check (DRC) was used to verify this complex OPC error. But each of these methods has its pros and cons. ORC verification of OPC data is rather accurate "process" wise but inspection of full chip device requires a lot of money (Computer , software,..) and patience (run time). DRC however has no such disadvantage, but accuracy of the verification is a total downfall "process" wise. In this study, we were able to create a new method for OPC data verification that combines the best of both ORC and DRC verification method. We created a method that inspects the biasing of the OPC data with respect to the illumination condition of the process that's involved. This new method for verification was applied to 80nm tech ISOLATION and GATE layer of the 512M DRAM device and showed accuracy equivalent to ORC inspection with run time that of DRC verification.
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James Moon, Young-Bae Ahn, Sey-Young Oh, Byung-Ho Nam, and Dong Gyu Yim "Simple method to verify OPC data based on exposure condition", Proc. SPIE 6156, Design and Process Integration for Microelectronic Manufacturing IV, 61561C (14 March 2006);

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