Optical and structural characteristics of ZnO films doped with gallium

O. A. Novodvorsky; V. Ya. Panchenko; O. D. Khramova; L. S. Gorbatenko; Ye. A. Butorina; C. Wenzel; J. W. Bartha

doi:10.1117/12.675049

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26 April 2006 Optical and structural characteristics of ZnO films doped with gallium

O. A. Novodvorsky, V. Ya. Panchenko, O. D. Khramova, L. S. Gorbatenko, Ye. A. Butorina, C. Wenzel, J. W. Bartha

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Proceedings Volume 6161, International Conference on Lasers, Applications, and Technologies 2005: Laser-Assisted Micro- and Nanotechnologies; 61610H (2006) https://doi.org/10.1117/12.675049
Event: International Conference on Lasers, Applications, and Technologies 2005, 2005, St. Petersburg, Russian Federation

Abstract

The ZnO films have been produced on the monocrystalline sapphite substrates (0001) by the pulsed laser deposition method. The photoluminescence spectra of these films have been obtained. The dependence of ZnO films transmission on the gallium admixture concentration has been determined for the spectral region of 200 to 3200 nm. it has been ascertained that the increase in gallium admixture is responsible for the shift of fundamental absorption band edge to the blue, and for the reduction in ZnO films transparency in the IR region. The dependence of the crystallographic parameters (lattice constant C) on the gallium admixture concentration and on the deposition parameters has been found.

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O. A. Novodvorsky, V. Ya. Panchenko, O. D. Khramova, L. S. Gorbatenko, Ye. A. Butorina, C. Wenzel, and J. W. Bartha "Optical and structural characteristics of ZnO films doped with gallium", Proc. SPIE 6161, International Conference on Lasers, Applications, and Technologies 2005: Laser-Assisted Micro- and Nanotechnologies, 61610H (26 April 2006); https://doi.org/10.1117/12.675049

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