Paper
18 April 2006 Improved picosecond laser ablation with second harmonic seeding
S. Zoppel, J. Zehetner, G. A. Reider
Author Affiliations +
Proceedings Volume 6180, Photonics, Devices, and Systems III; 61801S (2006) https://doi.org/10.1117/12.675831
Event: Photonics, Devices, and Systems III, 2005, Prague, Czech Republic
Abstract
We report on recent results of laser ablation in semiconductors obtained by simultaneous irradiation of the sample with a superposition of the fundamental beam of a picosecond-Neodymium-Vanadate (Nd:VAN) laser (1064 nm, 10 ps pulse duration) and a small fraction of its second harmonic (SH) produced in a thin nonlinear crystal. In this fashion, the ablation yield could be increased by 70%. In addition, the ablation quality was improved in terms of surface smoothness. The underlying mechanism can be attributed to a 'seeding' of the target area with free carriers by the 532 nm radiation.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Zoppel, J. Zehetner, and G. A. Reider "Improved picosecond laser ablation with second harmonic seeding", Proc. SPIE 6180, Photonics, Devices, and Systems III, 61801S (18 April 2006); https://doi.org/10.1117/12.675831
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KEYWORDS
Laser ablation

Picosecond phenomena

Semiconductor lasers

Absorption

Electrons

Femtosecond phenomena

Semiconductors

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