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20 April 2006 3D photonic crystals based on expitaxial III-V semiconductor structures for nonlinear optical interactions
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Abstract
We have investigated a three-dimensionally periodic (3D) photonic crystal structure based on an epitaxial periodic GaAs/Al0.93Ga0.07As multilayer structure that was designed for non-linear optical interactions. The 3D photonic crystal structure consisted of a two-dimensionally periodic planar photonic crystal hole pattern etched into the one-dimensionally periodic multilayer structure designed for a centre wavelength of λ = 1.6 μm. Numerical simulations on the 3D PhC structure have shown that it should exhibit slow group velocity modal features near the edge of the photonic bandgap.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harold M. H. Chong, Richard M. De La Rue, Liam O'Faolain, Thomas F. Krauss, Nadia Belabas, Ariel Levenson, Fabrice Raineri, Rama Raj, Isabelle Sagnes, Dominique Coquillat, Magali Astic, Philippe Delaye, Philippe Lalanne, Robert Frey, and Gérald Roosen "3D photonic crystals based on expitaxial III-V semiconductor structures for nonlinear optical interactions", Proc. SPIE 6182, Photonic Crystal Materials and Devices III (i.e. V), 618211 (20 April 2006); https://doi.org/10.1117/12.669476
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