Er3+/Yb3+ activated silica-hafnia planar waveguides for photonics fabricated by rf-sputtering

A. Chiasera; S. N. B. Bhaktha; M. Brenci; A. Chiappini; M. Ferrari; V. Foglietti; R. R. Gonçalves; Y. Jestin; A. Minotti; M. Montagna; E. Moser; S. Pelli; G. C. Righini; C. Tosello; K. C. Vishnubhatla

doi:10.1117/12.664564

20 April 2006 Er³⁺/Yb³⁺ activated silica-hafnia planar waveguides for photonics fabricated by rf-sputtering

A. Chiasera, S. N. B. Bhaktha, M. Brenci, A. Chiappini, M. Ferrari, V. Foglietti, R. R. Gonçalves, Y. Jestin, A. Minotti, M. Montagna, E. Moser, S. Pelli, G. C. Righini, C. Tosello, K. C. Vishnubhatla

Author Affiliations +

Proceedings Volume 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits; 61830O (2006) https://doi.org/10.1117/12.664564
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

Er³⁺/Yb3^+-codoped 95.8 SiO₂-4.2 HfO₂ planar waveguide was fabricated by the rf-sputtering technique. The sample was doped with 0.2 mol% Er and 0.2 mol% Yb. The thickness and the refractive indices of the waveguide were measured by an m-line apparatus operating at 543.5, 632.8, 1319 and 1542 nm. The losses, for the TE₀ mode, were evaluated at 632.8, 1319 and 1542 nm. The structural properties were investigated with energy dispersive spectroscopy and Raman spectroscopy. The waveguide had a single-mode at 1.3 and 1.5 μm and an attenuation coefficient of 0.2 dB/cm at 1.5 μm was obtained. The emission of ⁴I13/2->⁴I15/2 of Er³⁺ ion transition with a 42 nm bandwidth was observed upon excitation in the TE₀ mode at 980 and 514.5 nm. The ⁴I_13/2 level decay curves presented a single-exponential profile, with a lifetime of 4.6 ms. Back energy transfer from Er³⁺ to Yb³⁺ was demonstrated by measurement of Yb³⁺ emission upon Er³⁺ excitation at 514.5 nm. Photoluminescence excitation spectroscopy was used to obtain information about the effective excitation efficiency of Er³⁺ ions by co-doping with Yb³⁺ ions. Channel waveguides in rib configuration were obtained by etching the active film by a wet etching process. Scanning Electron Microscopy was used to analyze the morphology of the waveguides.

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A. Chiasera, S. N. B. Bhaktha, M. Brenci, A. Chiappini, M. Ferrari, V. Foglietti, R. R. Gonçalves, Y. Jestin, A. Minotti, M. Montagna, E. Moser, S. Pelli, G. C. Righini, C. Tosello, and K. C. Vishnubhatla "Er³⁺/Yb³⁺ activated silica-hafnia planar waveguides for photonics fabricated by rf-sputtering", Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 61830O (20 April 2006); https://doi.org/10.1117/12.664564

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